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| TN3019A Discrete POWER & Signal Technologies TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 140 7.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN3019A 1.0 8.0 125 50 Units W mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation TN3019A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 30 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 80 140 7.0 0.01 10 0.01 V V V A A A ON CHARACTERISTICS hFE DC Current Gain I C = 0.1 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 150 mA, VCE = 10 V I C=150 mA, VCE=10 V,TA= -55C I C = 500 mA, VCE = 10 V* I C = 1.0 A, VCE = 10 V* I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 10 mA, IB = 1.0 mA 50 90 100 40 50 15 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.2 0.5 1.1 V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo hfe rb'Cc NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Collector Base Time Constant Noise Figure I C = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 MHz I E = 10 mA, VCB = 10 V, f = 4.0 MHz I C = 100 mA, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz 80 100 12 60 400 400 4.0 pS dB MHz pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% TN3019A NPN General Purpose Amplifier (continued) Typical Characteristics V CESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 350 300 250 200 150 100 50 0 0.1 0.3 1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA) 1000 - 40 C 125 C Collector-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 25 C V CE = 1V = 10 25 C 0.4 - 40 C 0.2 125 C 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) P 12 1000 = 10 0.8 VBEON - BASE EMITTER ON VOLTAGE (V) V BESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 125 C - 40 C 25 C - 40 C 25 C 125 C 0.4 0.4 0.2 0 0.1 VCE= 1V 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 10 100 I C - COLLECTOR CURRENT (mA) P 12 1000 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 10 CAPACITANCE (pF) VCB = 80V Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 f = 1.0 MHz 80 60 40 Ceb 1 20 0 0.1 C cb 0.1 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 125 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Small Signal Current Gain at 20 MHz h FE - SMALL SIGNAL CURRENT GAIN 10 f = 20 MHz 8 VCE = 10V TIME (ns) 6 4 2 0 VCE = 1.0V 800 600 400 200 1000 Switching Times vs Collector Current tr 1 I C tf ts td 1000 10 100 - COLLECTOR CURRENT (mA) P 12 500 0 10 100 500 I C - COLLECTOR CURRENT (mA) Turn On and Turn Off Times vs Collector Current 1000 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature TO-226 0.75 800 TIME (ns) 600 400 200 t on 0 10 I C I B1 = I B2 = I C V CC = 50V 10 0.5 t off 0.25 100 500 - COLLECTOR CURRENT (mA) P 12 1000 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued) Test Circuit - 4.0 V 50 V IC 150 mA 200 mA 500 mA Rb 314 157 94 RL 330 167 100 - 1 F 1.0 K RL Rb To Sampling Scope Rise Time 5.0 ns Input Z 100 k 50 1.5 S 10 V 0V Pulse Source Rise Time 5.0 ns Fall Time 10 ns FIGURE 1: tON, tOFF Test Circuit |
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